A comparative study of the photoluminescence properties of a-SiOx : H filmand silicon nanocrystallites

Photoluminescence (PL) properties in a-SiOx and silicon crystallites with n anometer dimensions were compared to investigate recombination processes an d to reveal the effect of a-SiOx on silicon crystallites, The PL spectra an d temperature dependence of PL intensity of a-SiOx (where x > 1) and silico n crystallites surrounded by SiOx layer shared some similarities. These res ults indicate that the PL peak found near 1.6 eV has its origin in the SiOx layer at the surface of the silicon con. Recombination processes are discu ssed by temperature dependence and lifetime of PL spectra. The PL intensity of silicon crystallites at room temperature originates from reduction of t he non-radiative recombination probability rather than increase in the radi ative one. (C) 2000 Elsevier Science B.V. All rights reserved.