Photoelectron spectroscopy studies of microcrystalline/amorphous silicon interfaces

Hydrogenated microcrystalline silicon (mu c-Si:H) films and microcrystallin e/amorphous silicon heterojunctions have been studied using in situ X-ray p hotoelectron spectroscopy (XPS), ultra-violet photoelectron spectroscopy (U PS), total yield and constant final state (CFS) spectroscopy. We present XP S valence band spectroscopy as a new method of determining the near-surface (similar to 5 MI) crystallinity of microcrystalline films. The analysis of the CFS spectra allows the direct determination of the valence band discon tinuity at the mu c-Si:H/a-Si:H interface. The experimental Delta E-v = 300 +/- 30 meV is in agreement with results obtained using indirect methods. ( C) 2000 Elsevier Science B.V. All rights reserved.