Dc and ac measurements on metal/a-Si : H/metal room temperature quantised resistance devices

Direct-current (dc) and alternating-current (ac) conductivities of room tem perature electroformed Cr/p(+)-a-Si:H/V thin film quantised resistance devi ces have been measured as a function of temperature, applied field and freq uency. The quantised resistance does not change over a temperature range. T his invariance is in accordance with the theoretical model suggested for hi gh temperature quantised resistance phenomena. The onset of quantised resis tance jumps is associated with the formation of an inductive component with in the structure indicating a temporary formation of a metallic conduction channel under the effect of an applied electric field. (C) 2000 Elsevier Sc ience B.V. All rights reserved.