Thin film Si solar cell fabricated at low temperature

Citation
K. Yamamoto et al., Thin film Si solar cell fabricated at low temperature, J NON-CRYST, 266, 2000, pp. 1082-1087
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
266
Year of publication
2000
Part
B
Pages
1082 - 1087
Database
ISI
SICI code
0022-3093(200005)266:<1082:TFSSCF>2.0.ZU;2-N
Abstract
Research and development of our film Si solar cells are reviewed. Our devel oped film polycrystalline Si (poly-Si) cells are well described by the stru cture of natural surface texture and enhanced absorption with a back reflec tor (STAR), where the active poly-Si layer is fabricated by plasma chemical vapor deposition (CVD) at low temperature. The cell with a thickness of 2. 0 mu m demonstrated an intrinsic efficiency of 10.7% (aperture 10.1%). By c ombining poly-Si cell with an a-Si cell, a stabilized efficiency of 12% has been reached for a-Si:H/poly-Si/poly-Si cell structure. (C) 2000 Elsevier Science B.V. All rights reserved.