Investigation of the optoelectronic properties of mu c-Si : H pin solar cells

Citation
H. Stiebig et al., Investigation of the optoelectronic properties of mu c-Si : H pin solar cells, J NON-CRYST, 266, 2000, pp. 1104-1108
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
266
Year of publication
2000
Part
B
Pages
1104 - 1108
Database
ISI
SICI code
0022-3093(200005)266:<1104:IOTOPO>2.0.ZU;2-#
Abstract
We have investigated microcrystalline silicon (mu c-Si:H) pin solar cells d eposited at different silane concentrations in the gas phase varying from 2 % to 7.2%. For these cells three features were found: the dark current of t he cells decreased, the open circuit voltage increased and the blue respons e reduced with increasing silane concentration during deposition. Tn study the transport and recombination of these structures we have compared the ex perimentally determined optoelectronic properties with simulated data. The simulations reveal that the equilibrium carrier concentration of free carri ers decreases and the affect of the nucleation region of the i-layer on the blue response increases with increasing silane concentration. (C) 2000 Els evier Science B.V. All rights reserved.