Influence of electric field distortion and i-layer quality on the collection function of drift-driven a-Si : H solar cells

Citation
C. Hof et al., Influence of electric field distortion and i-layer quality on the collection function of drift-driven a-Si : H solar cells, J NON-CRYST, 266, 2000, pp. 1114-1118
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
266
Year of publication
2000
Part
B
Pages
1114 - 1118
Database
ISI
SICI code
0022-3093(200005)266:<1114:IOEFDA>2.0.ZU;2-I
Abstract
A refined analytical model describing the photocurrent collection in amorph ous silicon solar cells is presented. Thereby, variations of the electric h eld within the intrinsic layer are formally taken into account and it is sh own that they can be summarized in a 'form factor', phi, which reduces the effective mobility recombination time product of the interior. Based on thi s model an experimental technique is introduced which aims to determine the transport quality of the intrinsic layer of amorphous silicon solar cells. Two series of cells are analyzed using this technique and the results are compared to transport measurements carried out on equivalent intrinsic laye rs deposited on glass. (C) 2000 Elsevier Science B.V. All rights reserved.