Electroluminescence (EL) and photoluminescence (PL) spectroscopies were use
d to study the effects of hydrogen dilution on a-Si:H and of varying Ge con
tent on aSiGe p-i-n cells. We found that (a) in the case of hydrogen diluti
on, the EL peak energy (ELpeak) increased with H-dilution that correlated w
ith an increase of open circuit voltage (V-oc), but the corresponding PL pe
ak energy (PLpeak) did not change; and (b) different from observations that
ELpeak < PLpeak, the ELpeak can be the same or larger than the PLpeak. The
results were explained by the model of dispersive-transport controlled rec
ombination for EL. We suggest that the V-oc is not only related to the opti
cal gap and the tail states but also to the transport processes. (C) 2000 E
lsevier Science B.V. All rights reserved.