Imagers using amorphous silicon thin film on application specific integrated circuit technology

Authors
Citation
M. Bohm, Imagers using amorphous silicon thin film on application specific integrated circuit technology, J NON-CRYST, 266, 2000, pp. 1145-1151
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
266
Year of publication
2000
Part
B
Pages
1145 - 1151
Database
ISI
SICI code
0022-3093(200005)266:<1145:IUASTF>2.0.ZU;2-Z
Abstract
As imaging systems become more demanding, the performance of image sensors has to keep pace with the development of computer components to process and store images. Besides resolution, color reproduction, dynamic range and sp eed, future image sensors are expected not only to provide raw signals, but to include part of the image processing system on-chip. Unlike charge coup led devices (CCDs) and complementary metal oxide semiconductor (CMOS) image rs, a sensor in thin film application specific integrated circuit (TFA) tec hnology is a vertically integrated device. The thin film detector is fabric ated independently of the application specific integrated circuit (ASIC) an d is therefore not affected by ASIC scaling. Fill factors are commonly clos e to 100%. The technology offers high flexibility since an existing ASIC ca n be supplied with different detector structures for application specific d evice optimization. (C) 2000 Elsevier Science B.V. All rights reserved.