A three-path model for visible/near infrared mu c-Si : H p-i-n detectors

The photocurrent delivered by entirely microcrystalline p-i-n-Si:H detector is analyzed under different applied bias and light illumination conditions . The internal collection depends not only on the energy range but also on the illumination side. Under [p] and [n] side irradiation the internal coll ection properties have an atypical shape. It is larger for an applied bias less than the open circuit voltage, has a decrease near the open circuit vo ltage (higher under [n] side illumination) and becomes almost invariant for larger voltages. Additionally, numerical modeling of the visible/near infr ared detector including the grain boundaries and the interfaces complements the study and provides a knowledge into the internal physical process. (C) 2000 Elsevier Science B.V. All rights reserved.