Image processing in a mu c-Si : H p-i-n image transducer

A two-dimensional p-i-n imager based on mu c-Si:H material is analysed. The basic building block for the sensor element is a transparent conductive ox ide (TCO)mu c-p-i-n Si:H photodiode with front metal contacts and a TCO bac k contact. A scan-out process based on the photovoltage signal induced by a modulated HeNe laser is used to acquire the image. An analysis of the geom etric image distortion and image restoration is given. Basic image processi ng algorithms are applied for image enhancement and pattern recognition. (C ) 2000 Elsevier Science B.V. All rights reserved.