Pulsed laser crystallization and doping for thin film transistors

Pulsed excimer-laser processing of amorphous silicon on non-crystalline sub strates allows the creation of new materials and devices. In this paper, we review (I) fabrication of polysilicon thin film transistors (TFTs) on glas s substrates, (2) integration of polysilicon and amorphous silicon devices on the same glass substrate and (3) formation of self-aligned contacts for amorphous silicon thin-film transistors via laser doping. (C) 2000 Elsevier Science B.V. All rights reserved.