Micro-Raman analysis of polysilicon membranes deposited on porous silicon channels

Local stress distribution is determined in polycrystalline silicon using mi cro-Raman spectroscopy. The microstructures are thin membranes over a thick porous silicon channel locally grown on bulk silicon. The effect of the wi dth of the membrane on the distribution of the local stress is measured. Th e results show that annealing reduces the residual stress by an order of ma gnitude and that the tensile stress in the membrane has a sinusoidal depend ence for the relatively narrow channels. (C) 2000 Elsevier Science B.V. All rights reserved.