Polymorphous silicon (pm-Si:K) consists of an amorphous silicon matrix in w
hich silicon crystallites with nanometer sizes are embedded. This material
combines the optical absorption of amorphous silicon (a-Si:H) with electric
al transport properties close to those of microcrystalline silicon (mu c-Si
:H). pm-Si:H. thin films were prepared by radio frequency plasma enhanced c
hemical vapor deposition To get a better insight in the growth process, we
measured the plasma electrically and by means of optical emission spectrosc
opy. The optical properties of the films were measured by spectroscopic ell
ipsometry (SE). The results are consistent with the proposal that the growt
h precursors of pm-Si:H differ from those of mu c-Si:H and a-Si:H and that
the silicon particles are formed in the gas phase. High resolution transmis
sion electron microscopy (HRTEM) revealed the presence of crystallites with
diamond and hexagonal structure embedded in the amorphous matrix. The ambi
polar diffusion length in pm-Si:H is a factor of three longer than in optim
ized a-Si:H as concluded from diffusion induced time resolved microwave con
ductivity (DTRMC) measurements. (C) 2000 Elsevier Science B.V. All rights r
eserved.