Microstructure and surface roughness of microcrystalline silicon prepared by very high frequency-glow discharge using hydrogen dilution

Citation
E. Vallat-sauvain et al., Microstructure and surface roughness of microcrystalline silicon prepared by very high frequency-glow discharge using hydrogen dilution, J NON-CRYST, 266, 2000, pp. 125-130
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
266
Year of publication
2000
Part
A
Pages
125 - 130
Database
ISI
SICI code
0022-3093(200005)266:<125:MASROM>2.0.ZU;2-2
Abstract
The microstructure of a series of silicon films deposited by Very high freq uency glow discharge (VHF-GD) with silane concentration in hydrogen Varying from 100% down to 1.25% has been observed with transmission electron micro scopy (TEM). The surface topography of the layers has been analysed by atom ic force microscopy (AFM). At silane concentration below 8.6%, a phase tran sition between amorphous hydrogenated silicon (a-Si:H) and microcrystalline silicon (mu c-Si:H) is observed by TEM. After this transition, the further decrease of silane concentration leads to complex changes of the crystalli ne microstructure of the layers. AFM observations of the surface reveal tha t the film rms roughness increases with the decrease of the silane concentr ation. The surface morphology is not related simply to the microstructure o f crystalline grains as observed by TEM. (C) 2000 Published by Elsevier Sci ence B.V. All rights reserved.