E. Vallat-sauvain et al., Microstructure and surface roughness of microcrystalline silicon prepared by very high frequency-glow discharge using hydrogen dilution, J NON-CRYST, 266, 2000, pp. 125-130
The microstructure of a series of silicon films deposited by Very high freq
uency glow discharge (VHF-GD) with silane concentration in hydrogen Varying
from 100% down to 1.25% has been observed with transmission electron micro
scopy (TEM). The surface topography of the layers has been analysed by atom
ic force microscopy (AFM). At silane concentration below 8.6%, a phase tran
sition between amorphous hydrogenated silicon (a-Si:H) and microcrystalline
silicon (mu c-Si:H) is observed by TEM. After this transition, the further
decrease of silane concentration leads to complex changes of the crystalli
ne microstructure of the layers. AFM observations of the surface reveal tha
t the film rms roughness increases with the decrease of the silane concentr
ation. The surface morphology is not related simply to the microstructure o
f crystalline grains as observed by TEM. (C) 2000 Published by Elsevier Sci
ence B.V. All rights reserved.