Schlafli cluster topological analysis of medium range order in paracrystalline amorphous semiconductor models

Citation
Mmj. Treacy et al., Schlafli cluster topological analysis of medium range order in paracrystalline amorphous semiconductor models, J NON-CRYST, 266, 2000, pp. 150-155
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
266
Year of publication
2000
Part
A
Pages
150 - 155
Database
ISI
SICI code
0022-3093(200005)266:<150:SCTAOM>2.0.ZU;2-#
Abstract
We show that topologically crystalline regions in computer models of amorph ous materials can be identified by examining the Schlafli cluster associate d with each atom. The Schlafli cluster contains those atoms that define the Schlafli circuit symbol. Different crystalline topologies that have the sa me Schlafli circuit symbol may be distinguished by considering the number o f atoms in the Schlafli cluster. The diameter of the cubic diamond Schlafli cluster in Ge is similar to 0.9 nm, which is typical of the shorter length scales associated with medium range order in amorphous materials. Regions of connected identical Schlafli clusters can be readily identified in model s and their combined size provides an intrinsic length scale for describing the medium range order. (C) 2000 Elsevier Science B.V. All rights reserved .