Generation-recombination noise studied in hydrogenated amorphous silicon

We measure generation-recombination noise in hydrogenated amorphous silicon and determine parameters both in thermal and non-thermal equilibrium. We p ropose a hole bound to a negatively charged Si dangling bond as the interme diate state in the process of thermal creation of holes. We arrive at a hol e binding energy of (0.3 +/- 0.1) eV and an attempt rate for hole creation of 7 x 10(12) s(-1). Under illumination we determine the quasi-Fermi level of the minority carriers. Light-induced degradation is shown to shift the d istribution of neutral dangling-bond states deeper into the gap. (C) 2000 E lsevier Science B.V. All rights reserved.