Structural and electronic properties of optimized a-Si : H films

Intrinsic a-Si:H films grown using optimized larger hydrogen dilution condi tions have been studied. Capacitance measurements show a decrease in defect density with increasing him thickness. For films with thickness of 1.3 mu m transient photocapacitance data indicate electronic transitions due to mi crocrystallites embedded in an amorphous matrix. Atomic force microscopy me asurements enable us to identify crystallites at the film surface, while Ke lvin probe force microscopy is used to measure their electronic properties. The correlation between the structural and electronic properties is discus sed. (C) 2000 Elsevier Science B.V. All rights reserved.