Citation
G. Juska et al., New method of drift mobility evaluation in mu c-Si : H, basic idea and comparison with time-of-flight, J NON-CRYST, 266, 2000, pp. 331-335
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093
→ ACNP
Volume
266
Year of publication
2000
Part
A
Pages
331 - 335
Database
ISI
SICI code
0022-3093(200005)266:<331:NMODME>2.0.ZU;2-#
Abstract
We illustrate problems of measure:ment of the drift mobility by time-of- fl
ight method on microcrystalline silicon. A new method, based on charge extr
action in linearly increasing voltage: is introduced. Simple theory as well
as numerical modelling of this new method are presented together with the
first experimental results on microcrystalline silicon. (C) 2000 Elsevier S
cience B.V. All rights reserved.