Metastability in amorphous silicon from hydrogen flips

Authors
Biswas, R Li, YP
Citation
R. Biswas et Yp. Li, Metastability in amorphous silicon from hydrogen flips, J NON-CRYST, 266, 2000, pp. 401-404
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
266
Year of publication
2000
Part
A
Pages
401 - 404
Database
ISI
SICI code
0022-3093(200005)266:<401:MIASFH>2.0.ZU;2-O
Abstract
A new metastability of hydrogen atoms in a-Si:H was found, from molecular d ynamics simulations. In the higher energy configuration H is flipped to the backside of the SiH bond, and is bonded to the same silicon atom since the SiH bond is rotated by nearly 180 degrees. This H-flip defect explains str uctural changes found from infrared absorption, Volume dilation, and nuclea r magnetic reasonance measurements. (C) 2000 Elsevier Science B.V. All righ ts reserved.