Effect of hole accumulation on photodegradation in a-Si : H

Authors
Imagawa, K Shimakawa, K Kondo, A
Citation
K. Imagawa et al., Effect of hole accumulation on photodegradation in a-Si : H, J NON-CRYST, 266, 2000, pp. 428-431
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
266
Year of publication
2000
Part
A
Pages
428 - 431
Database
ISI
SICI code
0022-3093(200005)266:<428:EOHAOP>2.0.ZU;2-F
Abstract
An effect of hole accumulation during band gap illumination on degradation is examined in hydrogenated amorphous silicon (rf glow-discharge). It is fo und that accumulation of holes is more efficient than that of electrons in causing photodegradation, similar to the carrier-induced metastability. We suggest that the self-trapping of holes (STI-F), which weakens covalent bon ds, could affect degradation and the number of STH could increase under hol e accumulation. (C) 2000 Elsevier Science B.V. All rights reserved.