Electron spin resonance and optical characterization of defects in microcrystalline silicon

Authors
Vanecek, M Poruba, A Remes, Z Rosa, J Kamba, S Vorlicek, V Meier, J Shah, A
Citation
M. Vanecek et al., Electron spin resonance and optical characterization of defects in microcrystalline silicon, J NON-CRYST, 266, 2000, pp. 519-523
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
266
Year of publication
2000
Part
A
Pages
519 - 523
Database
ISI
SICI code
0022-3093(200005)266:<519:ESRAOC>2.0.ZU;2-X
Abstract
Electron spin resonance (ESR), constant photocurrent method (CPM), photothe rmal deflection spectroscopy (PDS), Raman and IR spectroscopy have been use d to measure microcrystalline silicon films. Besides standard defects with a g-value of 2.0055, new defects with a g-value similar to 2.0030 have been created during annealing this material. Proportionality between the subgap optical absorption and ESR spin density has been observed. (C) 2000 Elsevi er Science B.V. All rights reserved.