Standard and electrically detected magnetic resonance in nanocrystalline silicon

We present results from standard and electrically detected magnetic resonan ce on nanocrystalline silicon from hot-wire and plasma-enhanced chemical va pour deposition for which the Raman spectra showed the same large crystalli ne fraction. Based on the fact that dangling bond spin density scales with the sub-band gap absorption coefficient at photon energies < 1.1 eV we sugg est the introduction of a calibration factor between the dangling bond spin density and the absorption coefficient. The photocarrier mobility-lifetime product and diffusion length increase with decreasing dangling bond spin d ensity and absorption coefficient. The electrically detected magnetic reson ance spectra shows no signal in the dark current and a single line when mea sured by the spin-dependent photocurrent. The experimentally determined g-v alue of this line is temperature dependent. The quantum-mechanical spin-pai r model explains the electrically detected magnetic resonance signal height . From the spin-pair model we determine microscopic parameters, e.g. single t-decay rate. (C) 2000 Elsevier Science B.V. All rights reserved.