On the relation between defect density and dopant concentration in amorphous silicon films

In this work we present a study of the relation between the concentration o f dopant gas used in the deposition of amorphous silicon films and the acti ve dopant concentration in the material. Fitting of experimental dark and l ight conductivity data have been performed by a numerical model to evaluate the ratio between dangling bond density and phosphine concentration. Simul ation results show that this ratio is constant for dopant concentration up to 5 x 10(18) and increases to 1 for larger dopant concentration. (C) 2000 Elsevier Science B.V. All rights reserved.