Light emitting wide band gap a-Si : H deposited by microwave electron cyclotron resonance plasma-enhanced chemical vapour deposition

We investigate hydrogenated amorphous silicon (a-Si:H) from the point of vi ew of light emitting applications. Thin films of wide band gap a-Si:H were prepared from silane SiH4 diluted with He by using the microwave electron c yclotron resonance plasma enhanced chemical vapour deposition. Room tempera ture photoluminescence (PL) and mainly electroluminescence (EL) of p(-)-i-n (+) (p+(-)p-n-n(+)) structures were studied, The PL and EL emission spectra are in the red/near-infrared region, EL, occuring in fact in recrystallise d parts of the devices (the crystallisation arising as a result of the appl ication of an external bias), has hysteresis and the EL devices evoke the a -Si:H memory switches. (C) 2000 Elsevier Science B.V. All rights reserved.