Optical properties of CaGd4Si3O13 (CGS) crystals with Er3+ used as 1.5 mu m laser material

The Stark structure of the I-4(13/2) and I-4(15/2) multiplets of the Er3+ i on in CaGd4Si3O13 (CGS) was determined. The transition cross-sections have been obtained from the absorption and the luminescence spectra The emission cross-section for pi-polarization in the 1529.5 nm luminescence band is eq ual to 2.1 x 10(-20) cm(2). A gain curve has been plotted fo pi-polarizatio n, and positive amplification occurs at 1550 nm. A wide luminescence band m akes it possible to obtain tunable generation in the range 1540-1590 nm. Th e spectral parameters of the crystals Er, Ce:CGS indicate ample scope for d eveloping an effective 1.5 mu m laser with semiconductor pumping.