ACTIVATED TRANSPORT IN THE 2D ELECTRON-SOLID IN SI

Authors
CAMPBELL JW DIORIO M PUDALOV VM
Citation
Jw. Campbell et al., ACTIVATED TRANSPORT IN THE 2D ELECTRON-SOLID IN SI, Physica. B, Condensed matter, 194, 1994, pp. 1241-1242
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
194
Year of publication
1994
Part
1
Pages
1241 - 1242
Database
ISI
SICI code
0921-4526(1994)194:<1241:ATIT2E>2.0.ZU;2-4
Abstract
We describe the characteristics of the temperature activated dc-transp ort observed in the insulating phase which occurs at dilute concentrat ions and low temperatures in high mobility 2D electron systems in Si. Our data show the existence of two different temperature regimes, one of which can be fitted well using the phase slippage model commonly ap plied to charge density waves.