Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers

Authors
Chae, KH Son, JH Chang, GS Kim, HB Jeong, JY Im, S Song, JH Kim, KJ Kim, HK Whang, CN
Citation
Kh. Chae et al., Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers, NANOSTR MAT, 11(8), 1999, pp. 1239-1243
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
NANOSTRUCTURED MATERIALS
ISSN journal
09659773 → ACNP
Volume
11
Issue
8
Year of publication
1999
Pages
1239 - 1243
Database
ISI
SICI code
0965-9773(199911)11:8<1239:VPIIBM>2.0.ZU;2-Y
Abstract
Visible photoluminescence from silicon nanocrystals embedded in SiO2 matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO2/Si/SiO2 films excited by an Ar-laser (457.9 nm) showed more int ense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO2 matrix was confirmed by cross-sectional high resolution transmission elect ron microscopy. The red luminescence is attributed to the silicon nanocryst als produced by ion beam mixing. (C) 2000 Acta Metallurgica Inc.