INFLUENCE OF INHOMOGENEITY ON CORRELATED SINGLE-ELECTRON TUNNELING INONE-DIMENSIONAL ARRAY OF SMALL TUNNEL-JUNCTIONS

Citation
N. Yoshikawa et al., INFLUENCE OF INHOMOGENEITY ON CORRELATED SINGLE-ELECTRON TUNNELING INONE-DIMENSIONAL ARRAY OF SMALL TUNNEL-JUNCTIONS, Physica. B, Condensed matter, 194, 1994, pp. 1309-1310
Citations number
4
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
194
Year of publication
1994
Part
1
Pages
1309 - 1310
Database
ISI
SICI code
0921-4526(1994)194:<1309:IOIOCS>2.0.ZU;2-E
Abstract
Simulation calculations are made on the influence of inhomogeneity of junction parameters on correlated single-electron tunneling in a long one-dimensional array of small tunnel junctions. Current-voltage chara cteristics, static electric field dependence and frequency spectrum of voltage oscillations of the array are numerically calculated using th e randomly scattered junction parameters. It is found that correlation of single-electron transfer is not seriously disturbed by inhomogenei ty of the junction parameters.