Ion-dose-dependent microstructure in amorphous Ge

Implantation-induced, microstructural modifications including increased bon d length and non-Gaussian static disorder have been measured in amorphous G e using extended x-ray absorption fine-structure spectroscopy. The evolutio n of the amorphous phase interatomic distance distribution as functions of ion dose and implant temperature demonstrates the influence of implantation conditions on amorphous phase structure. Results are attributed to increas ed fractions of three- and fivefold coordinated atoms as a means of accommo dating implantation-induced point defects.