Spin relaxation in semiconductor quantum dots

Citation
Av. Khaetskii et Yv. Nazarov, Spin relaxation in semiconductor quantum dots, PHYS REV B, 61(19), 2000, pp. 12639-12642
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
61
Issue
19
Year of publication
2000
Pages
12639 - 12642
Database
ISI
SICI code
0163-1829(20000515)61:19<12639:SRISQD>2.0.ZU;2-C
Abstract
We have studied spin-flip processes in GaAs electron quantum dots that acco mpany transitions between different discrete energy levels. Several differe nt mechanisms that originate from spin-orbit coupling are shown to be respo nsible for such processes. We have evaluated the rates for all mechanisms w ith and without. a magnetic field. We have shown that the spin relaxation o f the electrons localized in the dots differs strikingly from that of the d elocalized electrons. The most effective spin-flip mechanisms related to th e absence of the inversion symmetry appear to be strongly suppressed for lo calized electrons. This results in unusually low spin-hip rates.