T. Higuchi et al., Electronic structure in the band gap of lightly doped SrTiO3 by high-resolution x-ray absorption spectroscopy, PHYS REV B, 61(19), 2000, pp. 12860-12863
The electronic structure of lightly Nb-doped SrTiO3 has been investigated u
sing high resolution x-ray absorption spectroscopy (XAS). Below the O 1s th
reshold, XAS spectra show two features due to empty stales whose energy pos
itions match with those of the 3d photoemission spectra in the band gap ene
rgy region of the parent undoped SrTiO3. Similar features are also observed
in lightly La-doped SrTiO3. These features exhibit systematic temperature
dependence, which is well explained by the Fermi-Dirac distribution functio
n. This indicates that the two features in the band gap are real bulk state
s such as simple donor states.