Electronic structure in the band gap of lightly doped SrTiO3 by high-resolution x-ray absorption spectroscopy

Citation
T. Higuchi et al., Electronic structure in the band gap of lightly doped SrTiO3 by high-resolution x-ray absorption spectroscopy, PHYS REV B, 61(19), 2000, pp. 12860-12863
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
61
Issue
19
Year of publication
2000
Pages
12860 - 12863
Database
ISI
SICI code
0163-1829(20000515)61:19<12860:ESITBG>2.0.ZU;2-O
Abstract
The electronic structure of lightly Nb-doped SrTiO3 has been investigated u sing high resolution x-ray absorption spectroscopy (XAS). Below the O 1s th reshold, XAS spectra show two features due to empty stales whose energy pos itions match with those of the 3d photoemission spectra in the band gap ene rgy region of the parent undoped SrTiO3. Similar features are also observed in lightly La-doped SrTiO3. These features exhibit systematic temperature dependence, which is well explained by the Fermi-Dirac distribution functio n. This indicates that the two features in the band gap are real bulk state s such as simple donor states.