Dimer of substitutional carbon in silicon studied by EPR and ab initio methods

Citation
Jr. Byberg et al., Dimer of substitutional carbon in silicon studied by EPR and ab initio methods, PHYS REV B, 61(19), 2000, pp. 12939-12945
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
61
Issue
19
Year of publication
2000
Pages
12939 - 12945
Database
ISI
SICI code
0163-1829(20000515)61:19<12939:DOSCIS>2.0.ZU;2-Y
Abstract
An EPR signal observed in carbon-doped float-zone silicon after irradiation with 2-MeV electrons at room temperature has been investigated. It represe nts a defect with S = 1/2, an apparently isotropic g factor (=2.0030), and a complicated hyperfine structure from Si-29 nuclei in five shells that are consistent with an overall trigonal symmetry. Subtle asymmetries of the hy perfine pattern indicate the presence of a small trigonal component of the g tensor as well. An additional pair of satellite lines is identified by th e relative intensity (1%) as arising from C-13 in natural abundance, occupy ing two equivalent sites on the trigonal axis. Several defect structures th at contain two equivalent carbon atoms on a trigonal axis were investigated by ab initio Hartree-Fock calculations. Only the negative charge state of a dicarbon center C-s-C-s, in which the carbon atoms occupy adjacent substi tutional sites, was found to be consistent with the EPR data.