Dynamics of thermal growth of silicon oxide films on Si

Thermal growth of silicon oxide films on Si in dry O-2 is modeled as a dyna mical system, assuming that it is basically a reaction-diffusion phenomenon . Relevant findings of the last decade are incorporated, as structure and c omposition of the oxide/Si interface and O-2 transport and reaction at init ial stages of growth. The present model departs from the well-established D eal and Grove framework [B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 377 0 (1965)] indicating that its basic assumptions, steady-state regime, and r eaction between O-2 and Si at a sharp oxide/Si interface are only attained asymptotically. Scaling properties of these model equations are explored, a nd experimental growth kinetics, obtained for a wide range of growth parame ters including the small thickness range, are shown to be well described by the model.