Thermal growth of silicon oxide films on Si in dry O-2 is modeled as a dyna
mical system, assuming that it is basically a reaction-diffusion phenomenon
. Relevant findings of the last decade are incorporated, as structure and c
omposition of the oxide/Si interface and O-2 transport and reaction at init
ial stages of growth. The present model departs from the well-established D
eal and Grove framework [B. E. Deal and A. S. Grove, J. Appl. Phys. 36, 377
0 (1965)] indicating that its basic assumptions, steady-state regime, and r
eaction between O-2 and Si at a sharp oxide/Si interface are only attained
asymptotically. Scaling properties of these model equations are explored, a
nd experimental growth kinetics, obtained for a wide range of growth parame
ters including the small thickness range, are shown to be well described by
the model.