We present a study of the mid-infrared intersubband absorption in n-doped G
aAs/AlxGa1-xAs multiple quantum wells (MQWs) for various internal incident
angles. Above 45 degrees incidence we show that the traveling-wave approxim
ation is not valid: redshifts of the absorption peak are observed, striking
ly additional peaks appear for thick structures, and the strength of absorp
tion does not necessarily increase with the incident angle. The understandi
ng of such complex absorption behavior requires considering the quantum wel
l as an absorbing uniaxial material and taking into account the multiple re
flections of the light inside the MQW.