Disorder-induced dephasing in semiconductors

Authors
Weiser, S Meier, T Mobius, J Euteneuer, A Mayer, EJ Stolz, W Hofmann, M Ruhle, WW Thomas, P Koch, SW
Citation
S. Weiser et al., Disorder-induced dephasing in semiconductors, PHYS REV B, 61(19), 2000, pp. 13088-13098
Citations number
47
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
61
Issue
19
Year of publication
2000
Pages
13088 - 13098
Database
ISI
SICI code
0163-1829(20000515)61:19<13088:DDIS>2.0.ZU;2-C
Abstract
Microscopic calculations including energetic disorder and Coulomb correlati ons up to third order in the laser field are performed. The resulting four- wave-mixing signals show polarization-dependent dephasing induced by diagon al disorder. The correct modeling of this disorder induced dephasing requir es the proper inclusion of Coulomb correlations. The theoretical results ar e in good qualitative agreement with measurements performed on a variety of quantum-well samples.