Analysis of negative magnetoresistance: Statistics of closed paths. II. Experiment

It is shown that a new kind of information can be extracted from the Fourie r transform of negative magnetoresistance in two-dimensional (2D) semicondu ctor structures. The procedure proposed provides the information on the are a distribution function of closed paths and on the area dependence of the a verage length of closed paths. Based on this line of attack the method of a nalysis of the negative magnetoresistance is suggested. The method has been used to process the experimental data on negative magnetoresistance in 2D structures with different relations between the momentum and phase relaxati on times. It is demonstrated this fact leads to distinction in the area dep endence of the average length of closed paths.