The changes in the electronic structure of the surface layer of a semicondu
ctor substrate have been studied with allowance made for the indirect and d
ipole-dipole interactions between adatoms. The conditions for the formation
and suppression of gaps in the energy band of surface states of the substr
ate are determined as a function of the adatom coverage of the surface. The
results obtained are used in the interpretation of the metal-semiconductor
transitions upon adsorption of cesium and sodium atoms on the Si(001) surf
ace. (C) 2000 MAIK "Nauka/Interperiodica".