A novel organic bottom anti-reflective coating material for 193 nm excimerlaser lithography

Citation
Sh. Hwang et al., A novel organic bottom anti-reflective coating material for 193 nm excimerlaser lithography, POLYMER, 41(17), 2000, pp. 6691-6694
Citations number
13
Categorie Soggetti
Organic Chemistry/Polymer Science
Journal title
POLYMER
ISSN journal
00323861 → ACNP
Volume
41
Issue
17
Year of publication
2000
Pages
6691 - 6694
Database
ISI
SICI code
0032-3861(200008)41:17<6691:ANOBAC>2.0.ZU;2-J
Abstract
Bottom anti-reflective coatings (BARC) are useful to suppress the problems associated with reflection by the substrate during the lithographical proce ssing. Now, we have proposed a new class of BARC material containing polyvi nylphenol as a W-absorber, poly(3,3'-dimethylpropene) (PDMP) as a crosslink er, and 2-hydroxycyclohexyl p-toluenesulfonate as a thermal acid generator. The PDMP was synthesized from acrolein by a two-step sequence reaction wit h a yield of 60%. The lithographic performance of photoresist with BARC tha t was proposed by us was evaluated and compared with those of photoresist w ithout BARC. (C) 2000 Published by Elsevier Science Ltd. All rights reserve d.