Threshold effect of incident light intensity on the photorefractive light-induced scattering in double-doped lithium niobate crystals and its application

Citation
Gq. Zhang et al., Threshold effect of incident light intensity on the photorefractive light-induced scattering in double-doped lithium niobate crystals and its application, PROG NAT SC, 10(6), 2000, pp. 432-439
Citations number
20
Categorie Soggetti
Multidisciplinary
Journal title
PROGRESS IN NATURAL SCIENCE
ISSN journal
10020071 → ACNP
Volume
10
Issue
6
Year of publication
2000
Pages
432 - 439
Database
ISI
SICI code
1002-0071(200006)10:6<432:TEOILI>2.0.ZU;2-R
Abstract
The formation mechanism of fanning noise in lithium niobate crystal is theo retically studied using the multi-wave mixing model. The threshold effect o f incident light intensity for the photorefractive light-induced scattering in double doped lithium niobate crystal is explained by combining the mult i-wave mixing model with the two-photorefractive-sensitive-center model for single charge-carrier. Light amplification competition between the fanning noise and the signal beam in doped lithium niobate crystals is also studie d. The existence of optimum photovoltaic field and optimum pump intensity i s predicted theoretically.