SINGLE-ELECTRON TUNNELING IN SINGLE JUNCTIONS AND MULTIJUNCTION SYSTEMS

Experimental dc I-V curves of single ultra-small (approximately 50 x 5 0 nm2) Al/AlO(x)/Al tunnel junctions were used to model characteristic s of single-electron transistors using similar junctions, within the f ramework of the ''orthodox'' theory of correlated tunneling. We have f ound that results from the simulations are very similar to experimenta l I-V curves of the transistors measured over a wide range of temperat ure.