INFLUENCE OF PRBA2CU(3-X)GA(X)O7 BARRIER MATERIAL ON ELECTRICAL BEHAVIOR OF RAMP-TYPE JOSEPHSON-JUNCTIONS

Authors
VERHOEVEN MAJ BOGUSLAVSKIJ YM REUVEKAMP EMCM GERRITSMA GJ ROGALLA H
Citation
Maj. Verhoeven et al., INFLUENCE OF PRBA2CU(3-X)GA(X)O7 BARRIER MATERIAL ON ELECTRICAL BEHAVIOR OF RAMP-TYPE JOSEPHSON-JUNCTIONS, Physica. B, Condensed matter, 194, 1994, pp. 1345-1346
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica. B, Condensed matter → ACNP
ISSN journal
09214526
Volume
194
Year of publication
1994
Part
1
Pages
1345 - 1346
Database
ISI
SICI code
0921-4526(1994)194:<1345:IOPBMO>2.0.ZU;2-3
Abstract
The use of PrBa2Cu3-xGaxO7 barrier material with increased resistivity by Ga doping (x=0; 0.05 and 0.1) in ramp-type DyBa2Cu3O7/PrBa2Cu3-xGa xO7/DyBa2Cu3O7 Josephson junctions has been investigated. All junction s have been fabricated with very smooth sputtered films and show good RSJ-like I-V characteristics with clear Josephson behaviour. Both crit ical current I(c) and normal state resistance R(n) are influenced by t he doping level as well as the barrier thickness. The temperature depe ndence of the normal state resistance at different Ga doping levels an d barrier thicknesses will be discussed.