Experimental determination of electron effective attenuation lengths in silicon dioxide thin films using synchrotron radiation - I. Data analysis andcomparisons

We have measured effective attenuation lengths (EALs) of 140-1100 eV electr ons in ultrathin silicon dioxide layers using synchrotron radiation. These EALs were generally smaller than those reported previously, although there was agreement with the values measured by Hochella and Carim (Surf, Sci, Le tt, 1988; 197: L260). Our measured EALs were similar to 37% smaller than th e corresponding inelastic mean free paths calculated from optical data by T anuma et al, Part of this difference is believed to be due to uncertainty i n measurements of the oxide thickness and the remainder to the effects of e lastic electron scattering. Copyright (C) 2000 John Wiley & Sons, Ltd.