Mesastripe single-mode separately bounded lasers based on InGaAsP/InP heterostructures obtained by VPE of organometallic compounds

Mesastripe single-mode InGaAsP/InP laser diode heterostructures with an opt ical emission power of 200 mW in the continuous lasing mode at two waveleng ths (1,3 and 1.55 mu m) were obtained by metalorganic VPE. In the samples w ith a mesastripe contact width of W = 5 mu m, the single-mode lasing regime was observed in the entire range of pumping currents. For a cavity length of 1.0-2.5 mm, the threshold current densities varied within 450-600 A/cm(2 ), The differential quantum efficiency reached 30-40%. The internal optical losses in the mesastripe laser heterostructures are reduced to 7.7 cm(-1). The output power-pumping current characteristics of control samples remain ed unchanged upon testing for 1500 h at 50 degrees C. (C) 2000 MAIK "Nauka/ lnterperiodica".