Single-crystalline GaAs, AlGaAs, and InGaAs layers grown by metalorganic VPE on porous GaAs substrates

Authors
Buzynin, YN Gusev, SA Danil'tsev, VM Drozdov, MN Drozdov, YN Murel', AV Khrykin, OI Shashkin, VI
Citation
Yn. Buzynin et al., Single-crystalline GaAs, AlGaAs, and InGaAs layers grown by metalorganic VPE on porous GaAs substrates, TECH PHYS L, 26(4), 2000, pp. 298-301
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
4
Year of publication
2000
Pages
298 - 301
Database
ISI
SICI code
1063-7850(200004)26:4<298:SGAAIL>2.0.ZU;2-0
Abstract
Conditions for the growth of single-crystalline GaAs, AlGaAs, and InGaAs la yers by metalorganic VPE were established and the corresponding semiconduct or films were obtained on porous GaAs substrates. Comparative data on the m orphology, structure, and electrical homogeneity of the epitaxial layers gr own on the porous and monolithic substrates are presented. It was found tha t passage to the porous substrates leads to changes in the film growth rate and morphology, the concentration of electrically active defects, and thei r distribution in depth of the epitaxial structures. (C) 2000 MAIK "Nauka/I nterperiodica".