The effect of thermal treatment on the electrical properties of n-Si doped
with the rare-earth element erbium during growth was studied for the first
time. Annealing of the erbium-doped samples in air at 900-1200 degrees C fo
r 1-2 h, followed by quenching or slow cooling, leads to inhibition of the
high-temperature defects. (C) 2000 MAIK "Nauka/Interperiodica".