Effect of heat treatment on the properties of erbium-doped silicon

Authors
Vlasov, SI Nazyrov, DE Iminov, AA Khudaiberdiev, SS
Citation
Si. Vlasov et al., Effect of heat treatment on the properties of erbium-doped silicon, TECH PHYS L, 26(4), 2000, pp. 328-329
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
4
Year of publication
2000
Pages
328 - 329
Database
ISI
SICI code
1063-7850(200004)26:4<328:EOHTOT>2.0.ZU;2-R
Abstract
The effect of thermal treatment on the electrical properties of n-Si doped with the rare-earth element erbium during growth was studied for the first time. Annealing of the erbium-doped samples in air at 900-1200 degrees C fo r 1-2 h, followed by quenching or slow cooling, leads to inhibition of the high-temperature defects. (C) 2000 MAIK "Nauka/Interperiodica".