Enhanced transverse magnetoresistive effect in semiconducting diamond films

A very large magnetoresistive effect in both homoepitaxial and heteroepitax ial semiconducting diamond films by chemical vapor deposition has been obse rved. The changes in the resistance of the films strongly depend on both ma gnetic field intensity and geometric form of the samples. The effect of dis k structure is greater than that of stripe type samples, also variation in the resistance of homoepitaxial diamond films is greater than that of heter oepitaxial diamond films. The resistance of homoepitaxial diamond films wit h the disk structure is increased by a factor of 2.1 at room temperature un der magnetic held intensity of 5 T, but only 0.80 for hetcroepitaxial diamo nd films.