Characteristics of homoepitaxial heavily boron-doped diamond films from their Raman spectra

Authors
Pruvost, F Bustarret, E Deneuville, A
Citation
F. Pruvost et al., Characteristics of homoepitaxial heavily boron-doped diamond films from their Raman spectra, DIAM RELAT, 9(3-6), 2000, pp. 295-299
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
9
Issue
3-6
Year of publication
2000
Pages
295 - 299
Database
ISI
SICI code
0925-9635(200004/05)9:3-6<295:COHHBD>2.0.ZU;2-3
Abstract
As the boron incorporation level and the wavelength of the exciting laser w ere varied, we observed systematic modifications of the Raman spectra of ho moepitaxial diamond films. A pronounced change in the lineshape of the zone -center optical Raman peak as well as a wide and structured signal at lower wavenumbers appeared simultaneously when the boron incorporation was incre ased above an abrupt threshold around 3 x 10(20) cm(-1). This threshold was found to depend on the excitation laser wavelength. Possible origins for t he wide peaks at 500 and 1225 cm(-1) are also discussed. (C) 2000 Elsevier Science S.A. All rights reserved.