Modeling of gas phase nucleation during silicon carbide chemical vapor deposition

An advanced model taking into account silicon cluster formation in the gas phase is suggested. 2D simulation is carried out at the growth parameters t ypical for chemical vapor deposition (CVD) of SiC in a vertical reactor. It is found that two main parameters have a significant effect on the nucleat ion and transport of the clusters in the gas phase: the input flow rate of silane and the thermophoretic force. Using a special criterion, the growth conditions favorable for parasitic graphite and silicon phases formation ar e determined. The obtained results are in good agreement with experimental data. (C) 2000 Elsevier Science S.A. All rights reserved.