Growth and high temperature performance of semi-insulating silicon carbide

The problems of obtaining insulating properties in bulk single-crystal sili con carbide by vanadium doping under the LETI method growth process are con sidered. The prime novelty of this work is the growth of a semi-insulating bulk single-crystal n-4H-SiC:V by the LETI method in vacuum from a vanadium and aluminium-containing source. The obtained 4H-SiC:V material possesses resistivity > 10(7) Omega cm at 20 degrees C and activation energy similar to 1.6 eV at 20-800 degrees C and can be applied as a semi-insulating subst rate material for extreme electronics based on silicon carbide or nitrides. (C) 2000 Elsevier Science S.A. All rights reserved.