Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering

Authors
Chalker, PR Morrice, D Joyce, TB Noakes, TCQ Bailey, P Considine, L
Citation
Pr. Chalker et al., Indium segregation in MOCVD InGaN layers studied by medium energy ion scattering, DIAM RELAT, 9(3-6), 2000, pp. 520-523
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
9
Issue
3-6
Year of publication
2000
Pages
520 - 523
Database
ISI
SICI code
0925-9635(200004/05)9:3-6<520:ISIMIL>2.0.ZU;2-Z
Abstract
The long term stability of InGaN based light emitting- and laser-diodes is potentially compromised by phase separation and indium interdiffusion. Medi um energy ion scattering has been used to investigate the diffusion of indi um within In0.25Ga0.75N/GaN structures at 950 degrees C. Comparison of the aligned and random ion scattering data for the as-deposited InGaN layer sho w that ca. 15% of the indium atoms are interstitial. Annealing at 950 degre es C causes decomposition of the InGaN layer into InN and a range of lower indium content ternary phases. (C) 2000 Elsevier Science S.A. All rights re served.